PART |
Description |
Maker |
UPD42S4170AG5M-70 UPD424170AV-70 UPD424170LG5M-A70 |
256K X 16 FAST PAGE DRAM, 70 ns, PDSO40 0.300 INCH, PLASTIC, REVERSE, TSOP2-44/40 256K X 16 FAST PAGE DRAM, 70 ns, PZIP40 0.400 INCH, PLASTIC, ZIP-40 256K X 16 FAST PAGE DRAM, 80 ns, PDSO40 256K X 16 FAST PAGE DRAM, 60 ns, PDSO40
|
Infineon Technologies AG
|
V53C256AP60 V53C256AP70 V53C256AJ80 V53C256AJ60 V5 |
256K X 1 FAST PAGE DRAM, 60 ns, PDIP16 256K X 1 FAST PAGE DRAM, 70 ns, PDIP16 256K X 1 FAST PAGE DRAM, 80 ns, PQCC18 256K X 1 FAST PAGE DRAM, 60 ns, PQCC18 256K X 1 FAST PAGE DRAM, 100 ns, PQCC18
|
MOSEL-VITELIC
|
KM44C256D KM44C256D-6 KM44C256D-7 KM44C256D-8 |
256k x 4Bit CMOS DRAM with Fast Page Mode 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode 256 × 4位CMOS动态随机存储器的快速页面模
|
Samsung Electronics Samsung Semiconductor Co., Ltd.
|
IS41LV16257B-35K IS41LV16257B-35T |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 256K X 16 FAST PAGE DRAM, 35 ns, PDSO40
|
Integrated Silicon Solution, Inc.
|
UPD424280LV-A70 UPD42S4280LG5-A70 UPD42S4280LG5M-A |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 256K X 18 FAST PAGE DRAM, 70 ns, PDSO40 256K X 18 FAST PAGE DRAM, 80 ns, PDSO40 256K X 18 FAST PAGE DRAM, 60 ns, PDSO40
|
|
HY53C256 HY53C256LS HY53C256S |
256K x 1-Bit CMOS DRAM 256K × 1位CMOS内存
|
Hynix Semiconductor, Inc.
|
V53C16258L V53C16258SLT40 V53C16258SLT45 V53C16258 |
HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH 256K X 16 EDO DRAM, 50 ns, PDSO40
|
Mosel Vitelic, Corp. Mosel Vitelic Corp MOSEL-VITELIC
|
HT45 |
256K X 16 FAST PAGE DRAM, 45 ns, PDSO40
|
MOSEL-VITELIC
|
MN414260CTT |
256K X 16 FAST PAGE DRAM, 70 ns, PDSO40
|
PANASONIC CORP
|
V53C104Z-10L V53C104K-10 V53C104K-10L |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM 高性能,低功耗,256K × 4位快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
HY514260 |
256K x 16 CMOS DRAM
|
Hynix Semiconductor
|